Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate - Université Savoie Mont Blanc
Article Dans Une Revue Semiconductor Science and Technology Année : 2020

Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate

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Matériaux
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hal-03118921 , version 1 (22-01-2021)

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T Arjmand, M Legallais, T Haffner, M Bawedin, C Ternon, et al.. Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate. Semiconductor Science and Technology, 2020, 36 (2), pp.025003. ⟨10.1088/1361-6641/abcade⟩. ⟨hal-03118921⟩
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