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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Silicon
Raman spectroscopy
Metal-insulator transition
Nuclear reaction analysis
Topological insulators
Kossel diffraction
Isotopic Tracing
PIXE
7550Ee
Magnetization curves
Rutherford backscattering spectrometry RBS
Acoustic propreties of solid
Silica
27Ald p&α
Epitaxy
Pb centers
Channeling
Gold
Nanoparticles
15N
NRA
13C
Annealing
RBS
ADSORPTION DESORPTION HYSTERESIS
AC susceptibility
Periodic multilayer
Ferromagnetic resonance
Hysteresis
Indium oxide
GaMnAs
17Op
Stable isotopic tracing
Charge exchange
Al2O3
27Alda
Growth
Pulsed laser deposition
Aluminum
XRD
Sputtering
Adsorption Isotherms
Transparent conductive oxide TCO
Ion beam analysis
27Aldp
Ageing
Defects
Atomic Layer Deposition ALD
ALD
Gallium oxide
3C-SiC
Topological defects
X-ray diffraction
Passivation
Magnetic semiconductors
18O
Interface defects
Thin film
Auger electron spectroscopy AES
Magnetic anisotropy
Zinc oxide
Silicon Carbide
Nitridation
Oxidation
HfO2
Oxygen deficiency
Diffusion
Alloys
Nanostructures
Photoluminescence
Low energy electron diffraction LEED
AFM
Ion implantation
18O resonance
Evaluation
2H
Nuclear resonance profiling NRP
NRP
Nickel
Epitaxial growth
SiC
Aluminium
Energy loss
Thin films
XPS
17O
Silicon carbide
17Opp
Acoustic
EPR
7550Pp
Adsorption
6855Jk
Density functional theory
Adsorbed layers
Measurement
Capillary condensation
Multilayer
8140Ef
7630Lh